STM's Silicon Carbide Schottky Diodes Receive ‘Electron d'Or 2009’ Award from Electronique Magazine

“The prestigious ‘Electron d'Or 2009’ award is an important validation of ST’s commitment to provide reliable and high-performance product for power applications,” said Ricardo de Sa Earp, General Manager of the ASD & IPAD product division (Application Specific Devices and Integrated Passive and Active Devices), STMicroelectronics. “We greatly value the recognition from Electronique and the panel of experts from the French electronics industry and are delighted with its selection of our SiC Schottky diodes.”

ST’s STPSC806D and STPSC1006D silicon-carbide diodes employ the latest substrate technology to eliminate power-supply switching losses, improving efficiency and reducing heat. While ordinary silicon diodes used in switched-mode power supplies lose up to 1% efficiency by not turning off immediately, SiC technology is able to deliver greater efficiency because no reverse recovery charge accumulates during the diode’s normal conduction period. By eliminating this reverse recovery charge, SiC Schottky diodes have much lower switching losses across the board, leading to higher efficiency and lower heat dissipation.