ROHM Semiconductor To Present Brand New Designs At PCIM 2013

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1. Second Generation SiC MOSFETs
Adding to its broad range of SiC products, ROHM will present its new line-up expansion of N-channel Silicon Carbide Power MOSFETs. The SCT2xx series without Schottky diode features different on-resistance types and max. currents in a TO247 package. They provide significantly lower power loss and handle a maximum junction temperature of 175°C which is unmatched in the market. With low on-resistance, high breakdown voltage, high speed switching and reverse recovery these new MOSFETs are easy to parallel and to drive which makes them ideal for deployment in solar inverters, DC-DC converters, switch mode power supplies, induction heating or motor drives.

2. Hybrid MOSFETs
ROHM will demonstrate a newly developed transistor combining the advantages of a MOSFET and IGBT to a “hybrid MOS” by adopting a new device structure to the PFC circuit for the power supply. The new hybrid MOSFET is featuring the “best of both worlds” - -high-speed switching characteristics, low-current performance of the MOSFET and high breakdown voltage of the IGBT. As a result, the high temperature and high current performance improved significantly while energy saving is possible over the full range – from small to large currents. The product is expected to begin sampling in summer 2013.