ROHM Semiconductor To Present A Range of Novelties at PCIM 2012

Highlights:

1. SiC Schottky barrier diodes, SiC MOSFETs and SiC modules
ROHM has further advanced the development of next-generation SiC (Silicon Carbide) Schottky barrier diodes (SBD) and MOSFETs, featuring lower loss and high voltage capability. This makes them ideal for a wide range of applications, including PFC (power factor correction) circuits, converters and inverters for power conversion. The MOSFETs are especially suited for power converters used in EV/HEV and industrial units. With the new SiC modules, switch loss can be reduced up to 80% compared to IGBT modules and a water cooling system can be replaced by an air cooling system.

2. Si Presto MOSFETs
ROHM's high voltage resistance PrestoMOS™ series is ideal for power supplies featuring an integrated inverter. High-speed switching combined with an internal diode including high trr characteristics results in greater efficiency and lower loss while contributing to smaller designs. At PCIM, new package types such as the CPT3 (D-PAK) and LPT (D2-PAK) will be showcased at the booth.

3. Isolated Gate Drivers
With a unique IC technology ROHM maximizes the SiC characteristics. The new Gate Drivers developed for SiC MOSFETs and IGBTs integrate a core-less transformer with 2,500Vrms isolation and can supply a gate voltage up to 24V. An original noise cancelling technology results in a high CMR and the driver can also support negative power supply. Additional features are a short propagation delay, a miller clamp output and a desaturation protection.

4. Li-ion Battery Management ICs
ROHM features its new series of ML52x ICs for the control, monitoring and protection of Lithium-ion battery packs, compatible with up to 14 cells with one IC. They detect the over-charge, over-discharge and over-current of each cell and automatically control the external charge/discharge MOS-FET. They also provide a cell voltage monitoring pin for the external MCU and passive cell balancing.