Analysis
RFMD Unveils High-Performance 2.3-2.7 GHz Power Amplifier IC for WiFi, WiMAX, LTE and Other Wireless Applications
RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today unveiled the RF5632, a 2.3—2.7 GHz power amplifier IC. The RF5632 is optimized specifically for WiMAX systems and can be designed into multiple applications, including customer premises equipment (CPE), gateways, access points, LTE wireless infrastructure, and WiFi-based wireless high definition interface (WHDI) for wireless video distribution networks.
The The RF5632 delivers an EVM of 2.5% and meets or exceeds WiMAX and LTE spectral mask requirements with an output power of 28dBm in the 2.3—2.4GHz, 2.4—2.5GHz, and 2.5—2.7GHz frequency ranges. The bias of the PA may be controlled to accommodate a 22dB gain step to increase the dynamic range of the system. The RF5632 offers high gain of 34dB and high linear output power, with best-in-class efficiency. The RF5632 maintains linearity over a wide range of temperatures and power outputs while the external match enables tuning for output power over multiple bands. The RF5632 also features internal input and inter-stage matching, a power-down mode and power detection. The RF5632 features InGaP HBT semiconductor technology and is packaged in a leadless chip carrier with a backside ground.
RFMD is showcasing the RF5632 and other industry-leading RF components at the electronica 2010 trade show in Munich Germany, November 9 through November 12. Product brochures are available at the RFMD booth (#A4.136), and datasheets can be obtained via RFMD's website at www.rfmd.com or by contacting RFMD at 336-664-1233.