Panasonic starts mass production of high-speed gate driver

AN34092B Features: 

• Driving transistors at high frequencies of up to 4 MHz that provide space savings;
• Achieving a high slew rate that contributes to energy savings; 
• Integrating the active miller clamp function that prevents malfunction during high-speed switching.

GaN is one of the next generation semiconductor compounds that can achieve space and energy savings when applied to transistors used in various power units. A gate driver is required to drive a transistor; however, general gate drivers for conventional silicon (Si) transistors cannot exploit the potential of GaN transistors since the gate structure of GaN transistors is different from that of Si transistors.

The new high-speed gate driver (AN34092B) helps our X-GaN easily and safely achieves high-speed switching performance. It can drive transistors at high frequencies of up to 4 MHz and integrates the active miller clamp function that prevents malfunction during high-speed switching.

X-GaN achieves a 600 V breakdown enhancement mode through our unique technology and features high-speed switching and low on-resistance[3]. The combination of X-GaN and dedicated high-speed gate drivers will contribute to significant space and energy savings of various power conversion units for industrial and consumer use.

X-GaN and dedicated high-speed gate drivers are suitable for various applications such as 100 W to 5 kW power supply units, inverters, data centers, mobile base stations, consumer electronics, audio-visual equipment, industrial and medical devices.

X-GaN and dedicated high-speed gate drivers will be exhibited at electronica 2016 in Munich, Germany from November 8 (Tuesday) to 11 (Friday) this year.