Analysis

NXP Announces Finalists in its First-Ever High Performance RF Design Challenge

13th June 2011
ES Admin
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NXP Semiconductors N.V. has announced three teams of finalists in its first-ever High Performance RF (HPRF) Design Challenge. Selected from among 400 entrants, three regional winning teams from EMEA, Asia Pacific and the Americas have been invited to the IEEE MTT-S International Microwave Symposium for 2011 (IMS2011) next week in Baltimore, Maryland.
Over the last few years, RF Power devices based on LDMOS have become more powerful, rugged and cost-effective, allowing the technology to enter new non-RF markets. NXP created the High Performance RF Design Challenge to encourage rising stars within the RF power community to build, test and display innovative designs in new application areas. The Grand Prize winner and respective second- and third-place winners will be announced at the NXP booth (#420) at IMS2011 on Wednesday, June 8 at 5 pm EDT.

The three teams of regional finalists in the NXP High Performance RF Design Challenge are:

* EMEA: Microwave Heating in a Microfluidic Reactor - Matthey Ayres, Robert Friedhoff, Michael Gray and Owain Jones
* APAC: Broadcasting System Doherty Power Amplifier with Analog Predistortion - Lei Wang and Jingxian Zhang
* AMEC: An Amplifier for a Portable 449 MHz Spaced Antenna Wind Profiler Radar - Brad Lindseth

Facts / Highlights:

* Design entries were rated and evaluated by registered community members, alongside a panel of jurors from NXP and universities, based on creativity, efficiency, usefulness, and realization during the three phases of the High Performance RF Design Challenge.
* The first phase - Conceptual Design - required an initial design, including an abstract, title and block diagram. The 400 design entries submitted during this phase showcased innovative ways of using RF as a power source, such as an electric bike charger, complete with a wireless charging station.
* During the second phase - Hardware Design - each contestant developed and provided proof of concept of a prototype, such as a video or measurement report, as well as an accompanying bill-of-materials, schematics, layout file and other design-related material. Highlights among the 51 remaining designs in the second phase included a garbage burner for Mars colonists.
* During the third phase, the leading teams from EMEA, Asia Pacific and the Americas were given the opportunity to polish their designs in an NXP HPRF design lab, with transportation and accommodation costs covered by NXP. Several creative entries were finalized during this phase, including advanced Doherty designs, Rotman lenses and microwave imaging devices.
* The winning teams have been invited to IMS2011 and will demo their designs live at the show. The Grand Prize will include a $3,000 Apple Store® voucher.

Supporting Quote:

* “Our goal with the High Performance RF Design Challenge has been to inspire talented RF engineers to think creatively on how we can bring RF power concepts to life - in areas extending beyond traditional RF application areas in telecommunications, aerospace and broadcast infrastructure. We’ve been delighted with both the quantity and quality of submissions from the worldwide RF power community, and applaud all participants in our first-ever HPRF Design Challenge,” said John Croteau, senior vice president and general manager, high performance RF and power lighting solutions, NXP Semiconductors.

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