Nitronex partnership with GCS leads to a capacity adavantage in rapidly growing GaN RF market

Devices fabricated at GCS show equivalent performance across the board to devices fabricated at Nitronex’s Durham, N.C. facility. Qualification includes extensive DC, RF, thermal, reliability, and other parametric testing. Nitronex plans to work closely with customers through a Process Change Notification (PCN) to ensure a smooth transition as it establishes GCS as a qualified wafer source for all of its products.

“When evaluating GaN suppliers, our customers tell us they want to compare performance, reliability, manufacturability, and cost. We believe that our current NRF1 discrete and MMIC-based processes have enabled us to develop a family of products that, for many market applications, meet or exceed our customers’ needs relating to performance and reliability — and we have the data to prove it. Partnering with GCS gives Nitronex a significant increase in capacity, improves our near and long-term cost reduction roadmap and provides access to capabilities that allow us to develop new GaN technologies”, said Charlie Shalvoy, CEO of Nitronex Corporation. “The combination of our proprietary 100mm GaN-on-Si process, and the full suite of production and new process development capabilities at GCS, gives us the ability to bea leader in the rapidly emerging market of GaN RF power devices”, he added.

“We are pleased to partner with Nitronex and add GaN-on-Si to our extensive
compound semiconductor capability. Nitronex’s unique technology gives us access to a
new and growing GaN RF market”, said Jerry Curtis, CEO of GCS Corporation. “Now
that NRF1 process is qualified at GCS, we look forward to working closely with Nitronex
and moving to volume production.”