Next-Generation 90nm SuperFlash Technology will be from SST and TSMC
SST (SiliconStorage Technology and TSMC (Taiwan Semiconductor Manufacturing Company) today announced the two companies have signed a new technology development and licensing agreement that will offer the first licensable 90nm embedded flash technology. Under terms of the agreement, TSMC will license SST's next-generation 90nm SuperFlash technology as part of TSMC's embedded flash memory portfolio.
The embedded flash market is experiencing tremendous growth. According to the market research firm WebFeet Research, the value of the embedded flash market is expected to reach $6.7 billion by 2011. This represents a 14.4 percent compounded annual growth rate.
"The popularity of today's consumer and mobile electronics devices has created strong demand for many types of embedded memories," said Alan Niebel, CEO, WebFeet Research. "As these applications continue to increase functionality, the demand for more advanced embedded flash technologies,
like SST's 90nm SuperFlash technology, will be at a premium."
SST's advanced 90nm SuperFlash technology addresses the needs of applications, such as 64-bit MCU cores, high-speed ASICs, and multimedia ICs. This high-performance, high reliability technology utilizes a split gate, source-side injection, poly-erase memory cell that is capable of true logic VDD read operation to address the demand for lower power and higher density applications. Samples will be available in 2007.The agreement is the latest between SST and TSMC and marks 10 years of collaboration.
"Our 90nm SuperFlash technology represents a significant extension to our reach in the embedded flash market," said Bing Yeh, president and CEO of SST. "The development of this next-generation memory cell is consistent with our roadmap of scaling the SuperFlash technology to finer process geometries. TSMC has been an invaluable and strategic partner for SST."