Toshiba Electronics launches new compact, integrated IGBT technology for induction heating

Maximum current ratings are 40A at 25ºC and 35A at 100ºC and the IGBT can operate with extended junction temperatures of up to 175ºC.

Toshiba’s GT40QR21 is designed for very high speed switching – typical IGBT fall time (tf) and turn-off time (toff) with a collector current of 40A are just 0.2µs and 0.4µs respectively, while typical reverse recovery time (trr) for the freewheeling diode is 0.6µs (IF = 15A). Typical collector-emitter saturation voltage (VCE(sat)) is rated at just 1.9V (IC = 40A).

Supplied in a TO-3P(N), TO247-equivalent package the IGBT has dimensions of 15.5mm x 20.0mm x 4.5mm and a maximum junction-to-case thermal resistance (Rth(j-c)) of 0.65ºC/W.