500W GaN-on-Si power transistor showcased at EuMW

10th October 2017

Mick Elliott

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The newest entry in its GaN-on-Si power transistor portfolio for pulsed L-Band radar systems targeted for airport surveillance radar (ASR) applications at 1.2 to 1.4 GHz has been released by MACOM Technology Solutions. The MAGX-101214-500 delivers efficiency at peak pulse power levels up to 500W and it is expected to outperform premium-priced GaN-on-SiC-based transistors, and exceed the performance, efficiency and power density of legacy LDMOS-based devices.

The device is being showcased at European Microwave Week (October 10-12) in Nuremberg.

The MAGX-101214-500 enables customers to scale to higher power levels across a host of ASR applications, delivering 500W output power and greater than 70% power efficiency under pulsed conditions at 50V operation.

Supplied in a small-footprint ceramic flanged package and supporting matching structures that minimise circuit size, the transistors help to enable rugged, compact radar systems underpinned with efficient, simplified cooling and power supply architectures.

“The continued expansion of MACOM’s GaN-on-Si product portfolio enables customers to address an ever-widening range of RF power requirements while achieving performance profiles that meet and exceed GaN-on-SiC, at significantly less cost at scaled volume production levels,” said Greg French, Senior Product Manager, RF Power, at MACOM. “Our proven technology leadership in GaN-on-Si combined with our decades-long heritage in civil and defense radar are among the many factors fueling our innovation in these important markets, as evidenced by the new MAGX-101214-500.”