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CISSOID introduces a new family of P-channel high temperature power MOSFET transistors

18th February 2010

Cissoid

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CISSOID, leader in high temperature semiconductor solutions, introduced VENUS, their new family of High Temperature 30V P-channel power MOSFET Transistors guaranteed for operation from -55°C up to +225°C. The VENUS family of P-channel power MOSFETs named CHT-PMOS3002, CHT-PMOS3004 and CHT-PMOS3008 are rated respectively for 2A, 4A and 8A maximum drain current. They complement the SATURN family of N-channel MOSFETs introduced by the company in November 2009.

VENUS power MOSFETs exhibit outstanding high temperature performances. At 225°C, CHT-PMOS3002’s gate leakage current remains below 50nA, while its drain off current is as low as 10µA and its turn-on delay time is 30ns. On-resistance and input capacitance of the family range respectively from 0.4Ω to 1.7Ω and from 150pF to 450pF.

The VENUS family from CISSOID enables the design of any system requiring reliable power control in a harsh environment from -55°C to +225°C, from motor drivers, DC-DC converters and SMPS, to inverters. Furthermore, P-Channel transistors make easier the design and control of high-side switches avoiding bootstrap or charge pump techniques. With VENUS products, system designers can improve cost, reliability and weight whilst banning fluid cooling from their application such as industrial process control, car battery chargers and aircraft actuators.